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ROLE OF THE CONDUCTIVITY OF THE CONFINING LAYERS IN DH-LASER SPATIAL HOLE BURNING EFFECTSJOYCE WB.1982; IEEE JOURNAL OF QUANTUM ELECTRONICS; ISSN 0018-9197; USA; DA. 1982; VOL. 18; NO 12; PP. 2005-2009; BIBL. 20 REF.Article

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GENERALIZED EXPRESSIONS FOR THE TURN-ON DELAY IN SEMICONDUCTOR LASERSDIXON RW; JOYCE WB.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 7; PP. 4591-4595; BIBL. 14 REF.Article

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ELECTRICAL DERIVATIVE CHARACTERISTICS OF INGAASP BURIED HETEROSTRUCTURE LASERSWRIGHT PD; JOYCE WB; CRAFT DC et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 3; PART. 1; PP. 1364-1372; BIBL. 21 REF.Article

STATISTICAL CHARACTERIZATION OF THE LIFETIMES OF CONTINUOUSLY OPERATED (AL, GA)AS DOUBLE-HETEROSTRUCTURE LASERS.JOYCE WB; DIXON RW; HARTMAN RL et al.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 28; NO 11; PP. 684-686; BIBL. 9 REF.Article

ON THE RELATIONSHIP OF LIGHT-OUTPUT NONLINEARITIES AND LIGHT-OUT-PUT SPIKES IN PROTON-BOMBARDED STRIPE-GEOMETRY DOUBLE-HETEROSTRUCTURE (AL,GA) AS LASERSDIXON RW; JOYCE WB; MILLER RC et al.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 2; PP. 1128-1130; BIBL. 14 REF.Article

EFFECT OF P-N JUNCTION POSITION ON THE PERFORMANCE OF INGAASP LIGHT EMITTING DIODESTEMKIN H; JOYCE WB; CHIN AK et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 8; PP. 745-747; BIBL. 8 REF.Article